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Research interests

Semiconductor nanowire spectroscopy and devices

Publications

1. Three-dimensional cross-nanowire networks recover full terahertz state,
   K Peng, D Jevtics, F Zhang, S Sterzl, DA Damry, MU Rothmann, B Guilhabert, MJ Strain, HH Tan, LM Herz, L Fu, MD Dawson, A Hurtado, C Jagadish, MB Johnston
   Science, 368:510--513 (2020) [ abstract | pdf | doi:10.1126/science.abb0924 ]
   Terahertz (THz) radiation is an interesting region of the electromagnetic spectrum lying between microwaves and infrared. Non-ionizing and transparent to most fabrics, it is finding application in security screening and imaging but is also being developed for communication and chemical sensing. To date, most THz detectors have focused just on signal intensity, an effort that discards half the signal in terms of the full optical state, including polarization. Peng et al. developed a THz detector based on crossed nanowires (arranged in a hash structure) that is capable of resolving the full state of the THz light. The approach provides a nanophotonic platform for the further development of THz-based technologies.Science, this issue p. 510Terahertz radiation encompasses a wide band of the electromagnetic spectrum, spanning from microwaves to infrared light, and is a particularly powerful tool for both fundamental scientific research and applications such as security screening, communications, quality control, and medical imaging. Considerable information can be conveyed by the full polarization state of terahertz light, yet to date, most time-domain terahertz detectors are sensitive to just one polarization component. Here we demonstrate a nanotechnology-based semiconductor detector using cross-nanowire networks that records the full polarization state of terahertz pulses. The monolithic device allows simultaneous measurements of the orthogonal components of the terahertz electric field vector without cross-talk. Furthermore, we demonstrate the capabilities of the detector for the study of metamaterials.
2. High electron mobility and insights into temperature-dependent scattering mechanisms in inassb nanowires,
   JL Boland, F Amaduzzi, S Sterzl, H Potts, LM Herz, AFI Morral, MB Johnston
   Nano Lett., 18:3703-3710 (2018) [ abstract | pdf | doi:10.1021/acs.nanolett.8b00842 ]
   InAsSb nanowires are promising elements for thermoelectric devices, infrared photodetectors, high-speed transistors, as well as thermophotovoltaic cells. By changing the Sb alloy fraction the mid-infrared bandgap energy and thermal conductivity may be tuned for specific device applications. Using both terahertz and Raman noncontact probes, we show that Sb alloying increases the electron mobility in the nanowires by over a factor of 3 from InAs to InAs0.65Sb0.35. We also extract the temperature-dependent electron mobility via both terahertz and Raman spectroscopy, and we report the highest electron mobilities for InAs0.65Sb0.35 nanowires to date, exceeding 16,000 cm(2) V-1 s(-1) at 10 K.