Latest Publications

Dependence of Dye Regeneration and Charge Collection on the Pore-Filling Fraction in Solid-State Dye-Sensitized Solar Cells Weisspfennig et al. Adv. Funct. Mater., 24:668--677 (Sep 2014) [ pdf ][ DOI:10.1002/adfm.201301328 ]	High Charge Carrier Mobilities and Lifetimes in Organolead Trihalide Perovskites Wehrenfennig et al. Adv. Mater., 0:0 ( 2014) [ pdf ][ DOI:10.1002/adma.201305172 ] The reason for the high performance of Perovskite solar cells is presented. Organolead trihalide perovskites are shown to exhibit the best of both worlds: charge carrier mobilities around 10 cm2/V/s and low bi-molecular charge recombination constants.	Direct Observation of Charge-Carrier Heating at WZ–ZB InP Nanowire Heterojunctions Yong et al. Nano Lett., 13:4280–4287 (Sep 2013) [ pdf ][ DOI:10.1021/nl402050q ] We show that type II heterointerfaces in semiconductor nanowires can sustain a hot charge-carrier distribution over an extended time period. In photovoltaic applications, such heterointerfaces may hence both reduce recombination rates and limit energy losses by allowing hot-carrier harvesting
Efficient planar heterojunction perovskite solar cells by vapour deposition Liu et al. Nature, 501:395--398 (Sep 2013) [ pdf ][ DOI:10.1038/nature12509 ] We demonstrate that a simple planar heterojunction solar cell incorporating a 330nm film of vapour-deposited lead halide perovskite as the absorbing layer can have solar-to-electrical power conversion efficiencies of over 15 per cent.	Electronic properties of GaAs, InAs and InP nanowires studied by terahertz spectroscopy Joyce et al. Nanotechnology, 24:214006 (May 2013) [ pdf ][ DOI:10.1088/0957-4484/24/21/214006 ] Using terahertz conductivity spectroscopy, we have assessed the ultrafast electronic properties of GaAs, InAs and InP nanowires. InAs nanowires exhibited extremely high electron mobility, highlighting their immediate suitability for high mobility devices. InP nanowires exhibited the longest carrier lifetimes, highlighting their potential for photovoltaics.	Strong Carrier Lifetime Enhancement in {GaAs} Nanowires Coated with Semiconducting Polymer Yong et al. Nano Lett., 12:6293–6301 (Dec 2012) [ pdf ][ DOI:10.1021/nl3034027 ] We observe strong carrier lifetime enhancement for nanowires blended with semiconducting polymers. The enhancement in such inorganic-organic hybrids is found to depend crucially on the ionization potential of the polymers with respect to the Fermi energy level at the surface of the (GaAs) nanowires.