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Select a topic: [Nanowires] [Perovskite Photovoltaics] [Terahertz Technology] [Full publication list]

Key pubilcations on Nanowires


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Increased Photoconductivity Lifetime in GaAs Nanowires by Controlled n-Type and p-Type Doping
Boland et al. ACS Nano, 10:4219-4227 (Mar 2016)
[ pdf ][ DOI:10.1021/acsnano.5b07579 ]
Terahertz spectroscopy of GaAs nanowires with controlled n-type and p-type shell doping, to show enhanced lifetimes due to reduced surface recombination caused by doping-related band bending.

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Low Ensemble Disorder in Quantum Well Tube Nanowires
Davies et al. Nanoscale, 7:20531--20538 (Dec 2015)
[ pdf ][ DOI:10.1039/C5NR06996C ]

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Modulation Doping of GaAs/AlGaAs Core--Shell Nanowires With Effective Defect Passivation and High Electron Mobility
Boland et al. Nano Lett., 15:1336-1342 (Jan 2015)
[ pdf ][ DOI:10.1021/nl504566t ]
We demonstrate effective modulation doping in GaAs nanowires. n-doping results in very long photoconductivity and PL lifetimes of 3.9ns and 2.4ns, in these nanowires.

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Electron Mobilities Approaching Bulk Limits in ``Surface-Free'' {GaAs} Nanowires
Joyce et al. Nano Lett., 14:5989-5994 (Sep 2014)
[ pdf ][ DOI:10.1021/nl503043p ]
We demonstrate that engineering the GaAs nanowire surface by overcoating with optimized AlGaAs shells is an effective means of obtaining exceptionally high carrier mobilities and lifetimes.

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Electronic properties of {GaAs}, {InAs} and {InP} nanowires studied by terahertz spectroscopy
Joyce et al. Nanotechnology, 24:214006 (May 2013)
[ pdf ][ DOI:10.1088/0957-4484/24/21/214006 ]
Using terahertz conductivity spectroscopy, we have assessed the ultrafast electronic properties of GaAs, InAs and InP nanowires. InAs nanowires exhibited extremely high electron mobility, highlighting their immediate suitability for high mobility devices. InP nanowires exhibited the longest carrier lifetimes, highlighting their potential for photovoltaics.

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Ultra-low Surface Recombination Velocity in InP Nanowires Probed by Terahertz Spectroscopy
Joyce et al. Nano Lett., 12:5325-5330 (Oct 2012)
[ pdf ][ DOI:10.1021/nl3026828 ]
Using terahertz spectroscopy we measured long charge carrier lifetimes and a remarkably low surface recombination velocity in InP nanowires. We found that the carrier mobility is strongly limited by the presence of crystallographic defects, such as zinc-blende/wurtzite polytypism and stacking faults in these InP nanowires.

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Noncontact Measurement of Charge Carrier Lifetime and Mobility in {GaN} Nanowires
Parkinson et al. Nano Lett., 12:4600--4604 (Sep 2012)
[ pdf ][ DOI:10.1021/nl301898m ]
We use terahertz spectroscopy to shown that GaN nanowires are electrically superior to bulk GaN.

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{III}--{V} semiconductor nanowires for optoelectronic device applications
Joyce et al. Prog. Quantum Electron., 35:23-75 (Mar 2011)
[ pdf ][ DOI:10.1016/j.pquantelec.2011.03.002 ]
III-V nanowires are prime candidates for future quantum electronic devices. This review discusses recent advances in the growth and characterisation of these nanowires, with particular emphasis on terahertz conductivity spectroscopy.

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Carrier lifetime and mobility enhancement in nearly defect-free core--shell nanowires measured using time-resolved terahertz spectroscopy
Parkinson et al. Nano Lett., 9:3349-3353 (Sep 2009)
[ pdf ][ DOI:10.1021/nl9016336 ]
We demonstrate that two-temperature growth of the GaAs Nanowires leads to an almost doubling in charge-carrier mobility and a tripling of carrier lifetime. We also show that overcoating the nanowires enhances the charge conductivity.

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Transient terahertz conductivity of {GaAs} nanowires
Parkinson et al. Nano Lett., 7:2162-2165 (Jul 2007)
[ pdf ][ DOI:10.1021/nl071162x ]
We observe the dynamic motion of surface plasmons in GaAs nanowires on picosecond timescales using pump-probe THz spectroscopy. The electron mobility is remarkably high, at 1/3 of bulk GaAs at room temperature.