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Select a topic: [Nanowires] [Perovskite Photovoltaics] [Terahertz Technology] [Full publication list]

Key pubilcations on Terahertz Technology


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Three-dimensional cross-nanowire networks recover full terahertz state
Peng et al. Science, 368:510--513 (May 2020)
[ pdf ][ DOI:10.1126/science.abb0924 ]
We have developed a new nanowire-based THz sensor that recovers the full state of THz pulses.

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Temperature-dependent refractive index of quartz at terahertz frequencies
Davies et al. J. Infrared Millim. Terahertz Waves, 39:1236-1248 (Dec 2018)
[ pdf ][ DOI:10.1007/s10762-018-0538-7 ]

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An ultrafast switchable terahertz polarization modulator based on iii-v semiconductor nanowires
Baig et al. Nano Lett., 17:2603-2610 (Apr 2017)
[ pdf ][ DOI:10.1021/acs.nanolett.7b00401 ]
Here, we present a novel ultrafast active THz polarization modulator based on GaAs semiconductor nanowires. The device has a picosecond switching time and broad bandwidth (0.1 and 4 THz).

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The 2017 terahertz science and technology roadmap
Dhillon et al. J. Phys. D-Appl. Phys., 50:043001 (Feb 2017)
[ pdf ][ DOI:10.1088/1361-6463/50/4/043001 ]
Comprehensive roadmap of terahertz science and technology in 2017. This 50 page article reviews that state-of-the-art and predicts future directions or research.

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Single Nanowire Photoconductive Terahertz Detectors
Peng et al. Nano Lett., 15:206-210 (Jan 2015)
[ pdf ][ DOI:10.1021/nl5033843 ]
We have developed a phase sensitive detector of coherent THz radiation based on a single nanowire. The device uses one GaAs/AlGaAs core-shell nanowire as is active component.

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An ultrafast carbon nanotube terahertz polarisation modulator
Docherty et al. J. Appl. Phys., 115:203108 (May 2014)
[ pdf ][ DOI:10.1063/1.4879895 ]
We demonstrate the potential of unaligned carbon nanotubes as dynamically tunable THz polarisers

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Improved performance of {GaAs}-based terahertz emitters via surface passivation and silicon nitride encapsulation
Headley et al. IEEE J. Sel. Top. Quantum Electron., 17:17-21 (Jan 2011)
[ pdf ][ DOI:10.1109/JSTQE.2010.2047006 ]
We have improved the stability and performance of terahertz photoconductive switches using a combination of chemical surface passivation and silicon nitride encapsulation.

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Photoconductive response correction for detectors of terahertz radiation
Castro-Camus et al. J. Appl. Phys., 104:053113 (Sep 2008)
[ pdf ][ DOI:10.1063/1.2969035 ]
We present a deconvolution method for correcting the spectral response of photoconductive THz detectors. We have also optimised ion-implanted materials for THz detector applications.

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Simulation and optimisation of terahertz emission from InGaAs and InP photoconductive switches
Lloyd-Hughes et al. Solid State Commun., 136:595-600 (Dec 2005)
[ pdf ][ DOI:10.1016/j.ssc.2005.09.037 ]
We simulate the terahertz emission from laterally biased InGaAs and InP using a three-dimensional carrier dynamics model in order to optimise the semiconductor material.

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Generation of high-power terahertz pulses in a prism
Johnston et al. Opt. Lett., 27:1935-1937 (Nov 2002)
[ pdf ][ DOI:10.1364/OL.27.001935 ]
A compact, high-power emitter of half-cycle terahertz (THz) radiation is demonstrated which produces pulses 20 times more powerful than conventional emitters.

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Simulation of terahertz generation at semiconductor surfaces
Johnston et al. Phys. Rev. B, 65:165301 (Apr 2002)
[ pdf ][ DOI:10.1103/PhysRevB.65.165301 ]
A semiclassical Monte Carlo model was developed which was used to distinguish between surface depletion field and photo-Dember mechanisms for generating THz radiation, and explain magnetic field enhanced THz generation.